Templated wide band-gap nanostructures
Identifieur interne : 00A391 ( Main/Repository ); précédent : 00A390; suivant : 00A392Templated wide band-gap nanostructures
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Abstract
In this two-pronged work we report (a) a study of defect nucleation in three-dimensional confined nanoislands and (b) a surface-elasticity induced size effect in the optoelectronic properties of embedded and templated semiconducting nanostructures. Several key features in the design of nanostructure templates are analyzed and dislocation free contour maps are presented for combination of various lattice mismatches, substrates, and geometrical dimensions. Unlike the case for thin epitaxial films, it is found that for nanostructures, below a certain critical lateral dimension, dislocation free structures of any thickness can be grown. With regards to the optoelectronic properties of nanostructures, while size dependency due to quantum confinement and electrostatic interactions are well known, we show that an additional size-dependent strain is caused by the distinct elastic behavior of surfaces and interfaces at the nanoscopic scale compared to the macroscopic scale. This is in contrast to the usual way strain is linked to optoelectronic properties, i.e., via classical elasticity, which ignores surface energies and is intrinsically size independent. Surface strains appear to be only influential in the nanometer regime due to appreciable surface-to-volume ratios. Among our major conclusions are that errors as large as 100 meV in band-gap prediction can incur if this size-dependent surface effect is ignored. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Templated wide band-gap nanostructures</title><author><name sortKey="Alizadeh, A" uniqKey="Alizadeh A">A. Alizadeh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>General Electric, Global Research Center, Niskayuna</wicri:cityArea></affiliation></author><author><name sortKey="Sharma, P" uniqKey="Sharma P">P. Sharma</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>General Electric, Global Research Center, Niskayuna</wicri:cityArea></affiliation></author><author><name sortKey="Ganti, S" uniqKey="Ganti S">S. Ganti</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>General Electric, Global Research Center, Niskayuna</wicri:cityArea></affiliation></author><author><name sortKey="Leboeuf, S F" uniqKey="Leboeuf S">S. F. Leboeuf</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>General Electric, Global Research Center, Niskayuna</wicri:cityArea></affiliation></author><author><name sortKey="Tsakalakos, L" uniqKey="Tsakalakos L">L. Tsakalakos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>General Electric, Global Research Center, Niskayuna</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0268336</idno><date when="2004-06-15">2004-06-15</date><idno type="stanalyst">PASCAL 04-0268336 AIP</idno><idno type="RBID">Pascal:04-0268336</idno><idno type="wicri:Area/Main/Corpus">00B530</idno><idno type="wicri:Area/Main/Repository">00A391</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Elasticity</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Nanostructured materials</term><term>Size effect</term><term>Surface energy</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6220D</term><term>6835M</term><term>6146</term><term>6225</term><term>8140J</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Nanomatériau</term><term>Elasticité</term><term>Effet dimensionnel</term><term>Contrainte interne</term><term>Energie surface</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this two-pronged work we report (a) a study of defect nucleation in three-dimensional confined nanoislands and (b) a surface-elasticity induced size effect in the optoelectronic properties of embedded and templated semiconducting nanostructures. Several key features in the design of nanostructure templates are analyzed and dislocation free contour maps are presented for combination of various lattice mismatches, substrates, and geometrical dimensions. Unlike the case for thin epitaxial films, it is found that for nanostructures, below a certain critical lateral dimension, dislocation free structures of any thickness can be grown. With regards to the optoelectronic properties of nanostructures, while size dependency due to quantum confinement and electrostatic interactions are well known, we show that an additional size-dependent strain is caused by the distinct elastic behavior of surfaces and interfaces at the nanoscopic scale compared to the macroscopic scale. This is in contrast to the usual way strain is linked to optoelectronic properties, i.e., via classical elasticity, which ignores surface energies and is intrinsically size independent. Surface strains appear to be only influential in the nanometer regime due to appreciable surface-to-volume ratios. Among our major conclusions are that errors as large as 100 meV in band-gap prediction can incur if this size-dependent surface effect is ignored. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Templated wide band-gap nanostructures</s1></fA08><fA11 i1="01" i2="1"><s1>ALIZADEH (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHARMA (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>GANTI (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEBOEUF (S. F.)</s1></fA11><fA11 i1="05" i2="1"><s1>TSAKALAKOS (L.)</s1></fA11><fA14 i1="01"><s1>General Electric, Global Research Center, Niskayuna, New York 12309</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>8199-8206</s1></fA20><fA21><s1>2004-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0268336</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this two-pronged work we report (a) a study of defect nucleation in three-dimensional confined nanoislands and (b) a surface-elasticity induced size effect in the optoelectronic properties of embedded and templated semiconducting nanostructures. 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